MRFE6S9125NR1 MRFE6S9125NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
1 40010
100
?100
0
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
?20
?40
IMD, INTERMODULATION DISTORTION (dBc)
?60
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
TWO?TONE SPACING (MHz)
IM3?U
?20
?30
?40
?50
80
IMD, INTERMODULATION DISTORTION (dBc)
VDD
= 28 Vdc, P
out
= 125 W (PEP)
IDQ
= 950 mA, Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulsed CW Output Power versus
Input Power
37
P6dB = 53.39 dBm (218.27 W)
Pin, INPUT POWER (dBm)
58
56
52
30 3631 33 3532
34
Actual
Ideal
50
29
54
P
out
, OUTPUT POWER (dBm)
P3dB = 52.83 dBm (191.87 W)
P1dB = 51.92 dBm
(155.6 W)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gain
and Drain Efficiency versus Output Power
?80
Pout, OUTPUT POWER (WATTS) AVG.
C
?20
C
?50
C
?60
?70
1 10 100
VDD= 28 Vdc, IDQ
= 950 mA
f = 880 MHz, N?CDMA IS?95
Pilot, Sync, Paging, Traffic Codes
8 Through 13
Gps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ηD
200
ALT1
TC
= ?30
C
85C
25C
25C
?40
85
?30
25C
85C
IM3?L
IM5?U
IM5?L
IM7?U
IM7?L
C
?30
VDD
= 28 Vdc, I
DQ
= 950 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
VDD
= 28 Vdc, I
DQ
= 950 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
?60
?10
1
57
55
53
51
0
10
20
30
40
50
60
?30C
?80
59
60
38 39
70
?10
?30C
25
85
ACPR
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRFE6S9130HSR5
MOSFET RF N-CH 27W NI-780S
MRFE6S9135HSR5
MOSFET RF N-CH 39W 28V NI-880S
MRFE6S9160HSR5
MOSFET RF N-CH 35W 28V NI-780S
MRFE6S9200HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6S9201HSR5
MOSFET RF N-CH 40W 28V NI-780S
MRFE6S9205HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6VP5600HR5
FET RF LDMOS DUAL 230MHZ NI1230
MRFE6VP61K25HSR6
MOSFET RF N-CH 1.25KW NI-1230S
相关代理商/技术参数
MRFE6S9130HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9130HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HSR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9130HSR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9135HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9135HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9135HSR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray